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N-Channel 600V 2A Power MOSFET

RM02N60A0

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The RM02N60A0 is 600V 2A N-MOSFET, providing very low on-resistance and excellent switching characteristics.
The RM02N60A0 is suitable for a variety of switching power supply, inverter, motor drive controller, charger, AC to DC adapters.

Applications

Key Spec.
RM02N60A0
Status Active
Drain to Source Breakdown Voltage, BVDSS (V) 600
Maximum Gate-to-Source Voltage, Max VGS (V) 30
Drain-to-Source On-Resistance, Max RDS_ON (ohm) 4.5
Features Low Qrr Type
Package Type TO-252
Features
  • Fast Switching
  • Low ON Resistance (RDS_ON ≤ 4.5Ω)
  • Low Gate Charge (Typical Data : 8.5nC)
  • Low Reverse transfer capacitances (Typical : 5.4pF)
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