This website stores cookies on your computer. These cookies are used to collect information about how you interact with our website and allow us to remember you. We use this information in order to improve and customize your browsing experience and for analytics and metrics about our visitors both on this website and other media. To find out more about the cookies we use, see our Cookie Statement. If you decline, your information won’t be tracked when you visit this website. A single cookie will be used in your browser to remember your preference not to be tracked. Find out more here.
RT9605B 为高频、三通道同步降压 MOSFET 驱动器,特别设计于驱动六个 N-MOSFET 的应用。此产品可和立锜应用于高密度电源的多相 PWM 降压控制器家族搭配。RT9605B 的输出驱动器可以有效的操作在 300kHz 频率。操作在高频时,必须非常注意散热问题。RT9605B 的每一个驱动器能在 30/40ns 上升/下降时间内驱动 3nF 负载。此 IC 于上桥仅用了一个外部电容和一个二极管,这减少了电路的复杂性,并可使用效能更好、性价比高的 N-MOSFET。所有的驱动器都具有适性击穿保护。RT9605B 会在刚启动时且多相 PWM 控制器控制前,侦测故障状况。因此,输入会被锁定在关闭状态。RT9605B 提供 WQFN-24L 4x4 封装。
可驱动 3 相 PWM 降压控制的 6 个 N-MOSFET
适性击穿 (Adaptive Shoot-through) 保护
支持高操作频率
快速输出上升/下降时间
传播延迟 40ns
用来关闭输出的三态 PWM 输入
Upper MOSFET Direct Short Protection
Small 24-Lead VQFN Package
符合 RoHS 标准及 100% 不含铅
订阅接收最新产品讯息 (请先登入)
.
Please check your email box and click validation url.