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<div class="WordSection1"> <h1>如何消除反激式&#36716;&#25442;器于&#21551;&#21160;期&#38388;MOSFET之&#36807;&#24212;力</h1> </div> <div class="WordSection2"> <p><br><br></p> <h2 id="__Bookmark__0">摘要</h2> <p class="MsoNormal">本&#24212;用文件&#20174;三大方向探&#35752;“如何有效消除反激式&#36716;&#25442;器于&#21551;&#21160;期&#38388;MOSFET之&#36807;&#24212;力”:&#20174;RICHTEK&#20869;嵌&#36719;&#21551;&#21160;功能之反激式&#36716;&#25442;控制器&#35774;&#35745;,再到系&#32479;回路&#31283;定度与&#24320;&#20851;管之&#24212;力&#20851;系,最后&#24102;入被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路分析及&#35774;&#35745;。本&#24212;用文件可供研&#21457;工程&#24072;&#21442;考,以在&#30005;源系&#32479;&#24320;&#21457;&#35774;&#35745;&#26102;降低&#24320;&#20851;管MOSFET所受之&#24212;力,避免&#24320;&#20851;管之&#25439;坏,提高&#30005;路操作之可靠度。</p> <p class="MsoNormal"><br><br></p> <h2 id="__Bookmark__1">前言</h2> <p class="MsoNormal">&#24320;&#20851;式&#30005;源供&#24212;器(Switching Power Supply)相&#23545;于&#32447;性式&#30005;源供&#24212;器(Linear Power Supply)具有体&#31215;小、重量&#36731;、效率高等优&#28857;,因而被&#24191;泛&#24212;用。&#24320;&#20851;式&#30005;源拓朴之一——“反激式&#36716;&#25442;器(Flyback Converter)”由于&#25317;有初/次&#32423;隔离、&#30005;路架构&#31616;&#21333;、零件&#25968;少、成本低等特色,被&#24191;泛&#24212;用于150W以下的&#30005;源系&#32479;。</p> <p class="MsoNormal">&#24320;&#20851;&#32452;件Power MOSFET扮演&#30528;&#24320;&#20851;式&#30005;源&#36716;&#25442;器的重要角色,“如何消除反激式&#36716;&#25442;器于&#21551;&#21160;期&#38388;MOSFET之&#36807;&#24212;力”,乃&#20026;本文探&#35752;之重&#28857;,探&#35752;&#23558;&#20174;反激式&#36716;&#25442;器控制器&#35774;&#35745;、回路&#31283;定度和&#32531;&#20914;&#30005;路&#35774;&#35745;三大方向展&#24320;。</p> <p class="MsoNormal">反激式控制器&#35774;&#35745;-RICHTEK&#20869;嵌&#36719;&#21551;&#21160;功能</p> <p class="MsoNormal">&#22270;一&#20026;典型的反激式&#36716;&#25442;器&#24212;用&#30005;路。&#22270;二&#20026;典型的反激式&#36716;&#25442;器功能方&#22359;&#22270;。&#24403;VDD&#30005;&#21387;&#36798;到控制IC&#21551;&#21160;&#38376;坎&#30005;&#21387;(V<sub>TH_ON</sub>)&#26102;,控制IC即&#20250;&#24320;始&#36816;作,它&#20250;首先&#21551;&#21160;&#36719;&#21551;&#21160;功能(Soft Start, SS)。</p> <p class="MsoNormal">控制IC&#20869;之振&#33633;器(Oscillator)&#20135;生&#26102;&#38047;信&#21495;(Clock)&#26469;&#35774;定S-R触&#21457;器(S-R Flip-Flop)之S端(Set);透&#36807;取得反&#39304;&#30005;&#21387;(V<sub>COMP</sub>)或定功率(Constant Power)之&#30005;流限制信&#21495;(Current Limit,V<sub>CS_CL</sub>)二者之&#30005;&#21387;最低信&#21495;与流&#36807;&#30005;流&#20390;&#27979;&#30005;阻(R<sub>CS</sub>)之&#30005;&#21387;(V<sub>CS</sub>)&#32463;由&#33033;&#23485;&#35843;制比&#36739;器(PWM Comparator)触&#21457;S-R触&#21457;器之R端(Reset),&#20915;定GATE端之&#33033;&#20914;&#23485;度。</p> </div> <div class="WordSection3"> <p class="a2"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image001_zh-cn.png"> <img id="圖片 1" alt="Technical Document Image Preview" height="286" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image001_zh-cn.png" width="623"></a></p> <p class="a6">&#22270;一、典型反激式&#36716;&#25442;器&#24212;用&#30005;路</p> </div> <div class="WordSection4"> <p class="a2"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image002_zh-cn.png"> <img id="圖片 6" alt="Technical Document Image Preview" height="363" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image002_zh-cn.png" width="570"></a></p> <p class="a6">&#22270;二、反激式&#36716;&#25442;器功能方&#22359;&#22270;</p> </div> <div class="WordSection5"> <p class="MsoNormal">控制IC透&#36807;GATE&#33050;位&#39537;&#21160;反激式&#36716;&#25442;器&#24320;&#20851;管(MOSFET),&#24320;&#20851;管&#23548;通(Turn ON)&#26102;,&#36755;入&#30005;&#21387;完全跨在&#21464;&#21387;器(耦合&#30005;感器)一次&#20391;之上,&#30005;感&#30005;流成&#32447;性增加,&#30005;感所&#20648;存的能量也因而逐&#28176;增加;此&#26102;由于功率二极管反偏,&#36127;&#36733;所需的能量完全由&#36755;出&#30005;容提供。藉由回路控制信&#21495;,&#24403;&#26629;极&#39537;&#21160;信&#21495;&#23558;&#24320;&#20851;管&#20851;&#38381;(Turn OFF)&#26102;,由于&#30005;感的磁通必需&#36830;&#32493;,迫使功率二极管&#23548;通,此&#26102;&#30005;感的&#30005;&#21387;也&#20250;反相&#26469;重置其磁通。&#36825;&#26102;候,通&#36807;二极管的&#30005;感&#30005;流&#23558;呈&#32447;性&#20943;少,此&#30005;流除了提供&#32473;&#36127;&#36733;外,也提供&#32473;&#36755;出&#30005;容充&#30005;,直到控制IC之&#26102;&#38047;信&#21495;触&#21457;下一周期&#24320;始&#20026;止,周而复始。以&#36830;&#32493;&#23548;通模式(Continuous-Conduction-Mode,CCM)&#20026;例,&#22270;三&#20026;反激式&#36716;&#25442;器及控制器&#21160;作示意&#22270;。</p> <p class="MsoNormal">&#24320;&#20851;管&#23548;通&#26102;,&#30005;流&#20390;&#27979;&#30005;阻上之&#30005;&#21387;(V<sub>CS</sub>)爬升斜率(m<sub>R</sub>)&#20026;:</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image003_zh-cn.png"> <img id="圖片 8" alt="Technical Document Image Preview" height="36" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image003_zh-cn.png" width="348"></a></p> <p class="MsoNormal">&#24320;&#20851;管&#20851;&#38381;&#26102;,二次&#20391;二极管&#23548;通流&#36807;&#30005;流,&#35813;&#30005;流(I<sub>Sec_Diode</sub>)通&#36807;映射以后反映至一次&#20391;,在&#30005;流&#20390;&#27979;&#30005;阻上形成&#38544;含的&#30005;&#21387;(V<sub>CS</sub>),其下降斜率(m<sub>F</sub>)&#20026;:</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image004_zh-cn.png"> <img id="圖片 12" alt="Technical Document Image Preview" height="40" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image004_zh-cn.png" width="345"></a></p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image005_zh-cn.png"> <img id="圖片 14" alt="Technical Document Image Preview" height="35" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image005_zh-cn.png" width="344"></a></p> <p class="MsoNormal">其中V<sub>in</sub>&#20026;跨于&#21464;&#21387;器一次&#20391;&#20004;端之&#36755;入&#30005;&#21387;;L<sub>P</sub>&#20026;&#21464;&#21387;器一次&#20391;之激磁&#30005;感;V<sub>O</sub>&#20026;&#36755;出&#30005;&#21387;;V<sub>F</sub>&#20026;功率二极管&#23548;通&#30005;&#21387;;n&#20026;&#21464;&#21387;器圈&#25968;比;N<sub>P</sub>&#20026;&#21464;&#21387;器一次&#20391;&#32447;圈匝&#25968;;N<sub>S</sub>&#20026;&#21464;&#21387;器二次&#20391;&#32447;圈匝&#25968;。</p> <p class="a2"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image006_zh-cn.png"> <img id="圖片 17" alt="Technical Document Image Preview" height="222" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image006_zh-cn.png" width="372"></a></p> <p class="a6">&#22270;三、反激式&#36716;&#25442;器及控制器&#21160;作示意&#22270; (CCM)</p> <p class="MsoNormal">反激式&#36716;&#25442;器&#24320;始&#36816;作初期,&#36755;出尚未建立,&#30005;&#21387;&#20026;零。由公式(2)可知&#30005;流&#20390;&#27979;&#30005;阻上之&#30005;&#21387;下降斜率&#36235;近于零,而控制IC于每&#20010;周期皆至少有最小&#23548;通&#26102;&#38388;(T<sub>ON_MIN</sub>),致使&#30005;感&#30005;流持&#32493;增加,即&#24320;&#20851;管上之尖峰&#30005;流(Peak Current)持&#32493;增加,&#30005;流&#20390;&#27979;&#30005;阻上之&#30005;&#21387;不&#26029;上升。&#24403;&#24320;&#20851;管&#20851;&#38381;瞬&#38388;,累加的尖峰&#30005;流、&#21464;&#21387;器之漏&#30005;感和&#24320;&#20851;管之寄生&#30005;容&#20135;生高&#39057;振&#33633;,于&#24320;&#20851;管之漏极(Drain)与源极(Source)&#38388;感&#24212;出极大之&#30005;&#21387;尖峰(Voltage Spike),&#23558;可能衍生出&#24320;&#20851;管之&#36807;&#24212;力&#38382;&#39064;,如&#22270;四(a)所示。&#24403;反激式&#36716;&#25442;器&#36755;出短路&#26102;,控制IC触&#21457;自&#21160;重&#21551;保&#25252;(Auto Recovery),上述&#38382;&#39064;&#23558;更&#36235;&#20005;重,&#24320;&#20851;管&#36807;&#24212;力&#38382;&#39064;也可能&#20250;表&#29616;得更&#20005;重,如&#22270;四(b)所示。</p> </div> <div class="WordSection6"> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image007_zh-cn.png"> <img id="圖片 18" alt="Technical Document Image Preview" height="259" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image007_zh-cn.png" width="677"></a></p> <p class="a6">&#22270;四、反激式&#36716;&#25442;器&#24320;&#20851;管之&#24212;力</p> </div> <div class="WordSection7"> <p class="MsoNormal">&#20026;了有效抑制&#21551;&#21160;尖峰&#30005;流,RICHTEK&#23558;&#36719;&#21551;&#21160;功能&#20869;嵌于控制IC中,它在控制IC&#24320;始&#36816;作&#26102;&#20250;先被&#21551;&#21160;,透&#36807;&#38454;梯式的&#30005;流限制信&#21495;,逐步&#23558;&#36755;出&#30005;&#21387;慢慢建立起&#26469;。同&#26102;搭配&#36807;&#30005;流&#38376;坎&#30005;&#21387;(V<sub>CS_SKP</sub>)跳周期(Cycle Skipping)模式&#35774;&#35745;于&#36719;&#21551;&#21160;期&#38388;,&#24403;&#30005;流&#20390;&#27979;&#30005;阻上之&#30005;&#21387;超&#36807;&#30005;流&#38376;坎&#30005;&#21387;&#26102;,控制IC&#20250;触&#21457;跳周期模式,延&#38271;&#30005;感&#30005;&#21387;反相重置磁通&#26102;&#38388;,使磁能能&#22815;有效地&#36716;移至&#36755;出端,加速&#36755;出&#30005;&#21387;之建立&#36807;程,同&#26102;&#36798;到降低&#24320;&#20851;管上之&#30005;流幅度的效果。&#22270;五&#20026;RICHTEK&#20869;嵌&#36719;&#21551;&#21160;功能示意&#22270;;&#22270;六&#20026;RICHTEK&#36719;&#21551;&#21160;功能-跳周期(Cycle Skipping)模式和&#20256;&#32479;&#36719;&#21551;&#21160;模式的比&#36739;。</p> </div> <div class="WordSection8"> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image008_zh-cn.png"> <img id="圖片 19" alt="Technical Document Image Preview" height="202" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image008_zh-cn.png" width="499"></a></p> <p class="a6">&#22270;五、RICHTEK&#20869;嵌&#36719;&#21551;&#21160;功能示意&#22270;</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image009_zh-cn.jpg"> <img id="圖片 20" alt="Technical Document Image Preview" height="209" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image009_zh-cn.jpg" width="680"></a></p> <p class="a6">(a)&#20256;&#32479;&#36719;&#21551;&#21160;模式</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image010_zh-cn.jpg"> <img id="圖片 21" alt="Technical Document Image Preview" height="206" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image010_zh-cn.jpg" width="680"></a></p> <p class="a6">(b)RICHTEK&#36719;&#21551;&#21160;功能-跳周期(Cycle Skipping)模式</p> <p class="a6">&#22270;六、&#20256;&#32479;&#36719;&#21551;&#21160;功能 vs. RICHTEK&#36719;&#21551;&#21160;功能</p> </div> <div class="WordSection9"> <p class="MsoNormal">&#22270;七所示&#20026;&#20256;&#32479;&#36719;&#21551;&#21160;功能和RICHTEK&#36719;&#21551;&#21160;功能在同一反激式&#36716;&#25442;器&#30005;源系&#32479;在&#21551;&#21160;期&#38388;的不同表&#29616;&#23545;照。采用&#20256;&#32479;&#36719;&#21551;&#21160;功能&#26102;,在&#21551;&#21160;初期&#20250;有一&#36739;大之&#30005;&#21387;尖峰,而采用RICHTEK&#36719;&#21551;&#21160;功能的情&#20917;下&#21017;&#27809;有&#36825;一&#29616;象,&#36825;意味&#30528;后者的&#21551;&#21160;&#36807;程是平&#32531;的,&#24320;&#20851;管所受&#24212;力是比&#36739;&#36731;的。</p> </div> <div class="WordSection10"> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image011_zh-cn.png"> <img id="圖片 22" alt="Technical Document Image Preview" height="262" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image011_zh-cn.png" width="675"></a></p> <p class="a6">&#22270;七、&#21551;&#21160;期&#38388;&#24320;&#20851;管之&#24212;力——&#20256;&#32479;&#36719;&#21551;&#21160;功能 vs. RICHTEK&#36719;&#21551;&#21160;功能</p> </div> <div class="WordSection11"> <p class="MsoNormal">&#22270;八所示是在&#36755;出短路&#26102;同一反激式&#36716;&#25442;器&#30005;源系&#32479;在分&#21035;采用&#20256;&#32479;&#36719;&#21551;&#21160;功能与RICHTEK&#36719;&#21551;&#21160;功能&#26102;的不同表&#29616;。由于&#36755;出短路,控制IC&#20250;触&#21457;自&#21160;重&#21551;保&#25252;(Auto Recovery),&#20256;&#32479;&#36719;&#21551;&#21160;功能在高&#36755;入&#30005;&#21387;工作&#26465;件下&#23558;出&#29616;更加&#24694;化的&#24320;&#20851;管&#24212;力&#29366;&#20917;,而优化的RICHTEK&#36719;&#21551;&#21160;功能由于具有特&#21035;的保&#25252;机制,可有效降低&#24320;&#20851;管之&#24212;力&#36127;&#25285;,提高了&#30005;路操作之可靠度。</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image012_zh-cn.png"> <img id="圖片 23" alt="Technical Document Image Preview" height="255" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image012_zh-cn.png" width="668"></a></p> </div> <div class="WordSection12"> <p class="a6">&#22270;八、&#36755;出短路&#26102;&#24320;&#20851;管之&#24212;力——&#20256;&#32479;&#36719;&#21551;&#21160;功能 vs. RICHTEK&#36719;&#21551;&#21160;功能</p> <p class="MsoNormal"><br><br></p> </div> <div class="WordSection13"> <h2 id="__Bookmark__2">反激式&#36716;&#25442;器回路&#31283;定度与&#24320;&#20851;管之&#24212;力&#20851;系</h2> <p class="MsoNormal">在反激式&#36716;&#25442;器的&#35774;&#35745;中,&#21464;&#21387;器之匝&#25968;比(n)与&#24320;&#20851;管之&#30005;&#21387;&#24212;力直接相&#20851;。&#25442;句&#35805;&#35828;,&#20915;定了最大占空比就&#20915;定了&#21464;&#21387;器匝&#25968;比,同&#26102;也&#20915;定了&#24320;&#20851;管之&#30005;&#21387;&#24212;力。</p> <p class="MsoNormal">&#24320;&#20851;管最大之&#30005;&#21387;&#24212;力(V<sub>DS_MAX</sub>)&#20026;:</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image013_zh-cn.png"> <img id="圖片 24" alt="Technical Document Image Preview" height="24" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image013_zh-cn.png" width="347"></a></p> <p class="MsoNormal">其中V<sub>in_max</sub>&#20026;最大&#36755;入&#30005;&#21387;;n&#20026;&#21464;&#21387;器匝&#25968;比;V<sub>O</sub>&#20026;&#36755;出&#30005;&#21387;;V<sub>F</sub>&#20026;功率二极管&#23548;通&#30005;&#21387;;V<sub>Spike</sub>&#20026;&#21464;&#21387;器漏&#30005;感造成的&#30005;&#21387;尖峰(于下&#33410;&#35828;明&#35752;&#35770;)。</p> <p class="MsoNormal">&#20174;&#36716;&#25442;器&#36816;行的原理上&#26469;看,占空比&#23545;&#24212;&#30528;&#24320;&#20851;管与二极管&#23548;通的比率。&#20174;有效的利用半&#23548;体&#35266;&#28857;,各占一半的占空比是利用率最高的,也就是&#35828;,&#23558;最大占空比(D<sub>max</sub>)定在 0.5 左右&#23545;&#24320;&#20851;管与二极管的利用率最高,所以一般&#35774;定在最低&#36755;入&#30005;&#21387;下的占空比&#20026; 0.5。再&#35745;算出&#21464;&#21387;器匝&#25968;比(n),并藉由&#24320;&#20851;管与二极管&#30005;&#21387;&#24212;力裕度,再&#35843;整 n 与D<sub>max</sub>。&#35814;&#32454;的反激式&#36716;&#25442;器及其&#21464;&#21387;器匝&#25968;比之&#35774;&#35745;,&#35831;&#21442;考&#24212;用文件《定&#39057;反激式&#36716;&#25442;器&#35774;&#35745;指南》。本&#24212;用文件于此探&#35752;&#35774;&#35745;者&#36739;易忽略思考之“反激式&#36716;&#25442;器回路&#31283;定度与&#24320;&#20851;管之&#24212;力&#20851;系”,并假&#35774;反激式&#36716;&#25442;器的&#21464;&#21387;器匝&#25968;比已&#36827;行了优化&#35774;&#35745;。</p> <p class="MsoNormal">探&#35752;反激式&#36716;&#25442;器之回路&#31283;定度,&#24212;先了解反激式&#36716;&#25442;器固有的右半平面零&#28857;&#38382;&#39064;。&#36825;&#20010;零&#28857;&#26080;法用&#20256;&#32479;的极&#28857;&#36827;行&#34917;&#20607;,所以,反&#39304;回路的交越&#39057;率(f<sub>C</sub>)必需&#36828;低于&#36825;&#20010;零&#28857;位置,&#23454;&#21153;上,反激式&#36716;&#25442;器的交越&#39057;率多半&#35774;&#35745;在3kHz 以下。&#23545;一&#20010;离&#32447;式反激式&#36716;&#25442;器而言,在低&#21387;&#36755;入、&#28385;&#36733;&#26102;交越&#39057;率&#20026;800Hz 到3kHz (以65kHz &#24320;&#20851;&#39057;率而言)、相位余裕(Phase Margin,ψ<sub>m</sub>)大于45度以上&#20026;最恰&#24403;。&#35814;&#32454;的反激式&#36716;&#25442;器回路&#35774;&#35745;&#35831;&#21442;考《离&#32447;式反激&#36716;&#25442;器反&#39304;&#35774;&#35745;》一文。</p> <p class="MsoNormal">&#35774;&#35745;不同的回路&#31283;定度&#36827;行&#34917;&#20607;&#23454;&#39564;,探&#35752;回路&#31283;定度与&#24320;&#20851;管之&#24212;力&#20851;系,可与理&#35770;形成相互佐&#35777;的&#20851;系。&#20026;了&#27979;量不同的回路增益特性&#23545;&#24320;&#20851;管所受&#24212;力的影&#21709;,我&#20204;在同一&#20010;反激式&#36716;&#25442;器&#30005;源系&#32479;上分&#21035;&#35774;定“ f<sub>C</sub><sub></sub>&lt; 800 Hz &amp;ψ<sub>m </sub>&lt; 45°”和“f<sub>C</sub><sub></sub>&gt; 800 Hz &amp;ψ<sub>m </sub>&gt; 45°”的回路增益特性并&#27979;量&#24320;&#20851;管之&#24212;力。&#22270;九及&#22270;十分&#21035;&#20026;低&#21387;及高&#21387;&#36755;入、&#28385;&#36733;&#26102;回路增益之交越&#39057;率与相位余裕&#23454;&#39564;&#27979;量曲&#32447;,&#22270;十一&#20026;高&#21387;&#36755;入、&#28385;&#36733;&#26102;&#24320;&#20851;管之&#24212;力&#29366;&#20917;。&#32463;&#36807;比&#36739;可知:&#24403;交越&#39057;率&#36739;低且相位余裕不足&#26102;,瞬&#26102;&#21709;&#24212;速度&#32531;慢,&#36755;出&#30005;&#21387;建立&#36807;程存在&#36807;&#20914;(Overshoot),根据公式(4),存在&#36807;&#20914;的&#36755;出&#30005;&#21387;&#23558;使&#24320;&#20851;管之&#24212;力增加。所以,适&#24403;&#35774;&#35745;的回路增益交越&#39057;率和足&#22815;的相位余裕,可以有效降低反激式&#36716;&#25442;器在&#21551;&#21160;期&#38388;施加在&#24320;&#20851;管上的&#24212;力,&#23545;避免&#24320;&#20851;管&#25439;坏有极好的&#24110;助。</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image014_zh-cn.jpg"> <img id="圖片 26" alt="Technical Document Image Preview" height="311" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image014_zh-cn.jpg" width="680"></a></p> </div> <div class="WordSection14"> <p class="a6">&#22270;九、低&#21387;&#36755;入&#28385;&#36733;&#26102;回路增益之交越&#39057;率与相位余裕</p> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image015_zh-cn.png"> <img id="圖片 27" alt="Technical Document Image Preview" height="322" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image015_zh-cn.png" width="681"></a></p> <p class="a6">&#22270;十、高&#21387;&#36755;入、&#28385;&#36733;&#26102;回路增益之交越&#39057;率与相位余裕</p> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image016_zh-cn.png"> <img id="圖片 28" alt="Technical Document Image Preview" height="233" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image016_zh-cn.png" width="586"></a></p> <p class="a6">&#22270;十一、反激式&#36716;&#25442;器在高&#21387;&#36755;入、&#28385;&#36733;&#26102;&#23545;&#24320;&#20851;管之&#24212;力</p> <p class="MsoNormal"><br><br></p> </div> <div class="WordSection15"> <h2 id="__Bookmark__3">被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路分析及&#35774;&#35745;</h2> <p class="MsoNormal">反激式&#36716;&#25442;器的&#21464;&#21387;器存在漏&#30005;感,&#24320;&#20851;管存在寄生&#30005;容,如&#22270;十二:反激式&#36716;&#25442;器及其&#32452;件等效&#30005;路模型所示。由于&#30005;感的磁通必需&#36830;&#32493;,&#24403;&#24320;&#20851;管&#20851;&#38381;(Turn OFF)&#26102;,&#21464;&#21387;器之漏&#30005;感&#30005;流瞬&#38388;被截&#26029;,&#20648;存于漏&#30005;感之磁通&#26080;法被&#36716;&#25442;至&#21464;&#21387;器二次&#20391;,此能量&#23558;在&#21464;&#21387;器之漏&#30005;感与&#24320;&#20851;管寄生&#30005;容&#38388;共振&#20135;生高&#39057;振&#33633;,&#24320;&#20851;管之漏极(Drain)与源极(Source)&#38388;(V<sub>DS</sub>)&#23558;形成一极高之&#30005;&#21387;尖峰(Voltage Spike),如&#22270;十三所示。&#22270;十三(a) &#20026;反激式&#36716;&#25442;器工作于&#36830;&#32493;&#23548;通模式(Continuous-Conduction-Mode,CCM)的波形;&#22270;十三(b) &#20026;反激式&#36716;&#25442;器工作于不&#36830;&#32493;&#23548;通模式(Discontinuous-Conduction-Mode,DCM)的波形。</p> <p class="MsoNormal">&#35813;高&#39057;振&#33633;迭加于&#24320;&#20851;管之漏极与源极&#38388;,迭加后的&#30005;&#21387;尖峰峰值的&#35745;算公式&#20026;:</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image017_zh-cn.png"> <img id="圖片 29" alt="Technical Document Image Preview" height="46" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image017_zh-cn.png" width="364"></a></p> <p class="MsoNormal">其中i<sub>DS_Peak</sub>&#20026;流&#32463;&#21464;&#21387;器一次&#20391;的&#24320;&#20851;管峰值&#30005;流;L<sub>LK</sub>&#20026;&#21464;&#21387;器一次&#20391;等效之漏&#30005;感;C<sub>P</sub>&#20026;&#21464;&#21387;器一次&#20391;等效之寄生&#30005;容;V<sub>in</sub>&#20026;&#36755;入&#30005;&#21387;;n&#20026;&#21464;&#21387;器匝&#25968;比;V<sub>O</sub>&#20026;&#36755;出&#30005;&#21387;;V<sub>F</sub>&#20026;功率二极管&#23548;通&#30005;&#21387;。</p> </div> <div class="WordSection16"> <p class="a2"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image018_zh-cn.png"> <img id="圖片 30" alt="Technical Document Image Preview" height="332" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image018_zh-cn.png" width="461"></a></p> <p class="a6">&#22270;十二、反激式&#36716;&#25442;器及其&#32452;件等效&#30005;路模型</p> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image019_zh-cn.png"> <img id="圖片 64" alt="Technical Document Image Preview" height="234" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image019_zh-cn.png" width="680"></a></p> <p class="a6">&#22270;十三、反激式&#36716;&#25442;器&#32452;件寄生之漏&#30005;感与&#30005;容共振波形</p> </div> <div class="WordSection17"> <br> <p class="MsoNormal">由上述&#32452;件之寄生&#30005;感及&#30005;容所&#20135;生之&#30005;&#21387;尖峰及伴&#38543;之高&#39057;振&#33633;,&#23558;&#23545;&#24320;&#20851;管造成&#24212;力&#20914;&#20987;甚至可能&#23558;其&#25439;坏,也可能衍生出&#30005;源系&#32479;之&#30005;磁干扰或和&#30005;路操作之可靠度&#38382;&#39064;。适&#24403;的&#32531;&#20914;&#30005;路(Snubber)可&#23545;此高&#39057;振&#33633;&#36827;行抑制,并&#23545;上述&#38382;&#39064;作有效之改善。</p> <p class="MsoNormal">本&#24212;用文件介&#32461;目前&#24191;泛&#24212;用于反激式&#36716;&#25442;器之被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路,如&#22270;十四所示。在&#24320;&#20851;管&#20851;&#26029;瞬&#38388;,&#21464;&#21387;器的漏&#30005;感&#30005;流依原初始方向&#32487;&#32493;流&#21160;,它&#23558;分成&#20004;路:一路(i<sub>DS</sub>)在逐&#28176;&#20851;&#26029;的&#24320;&#20851;管&#32487;&#32493;流&#21160;;另一路(i<sub>Sn</sub>)&#32463;由&#32531;&#20914;&#30005;路的二极管(D<sub>Sn</sub>)向&#30005;容(C<sub>Sn</sub>)充&#30005;。由于C<sub>Sn</sub>上的&#30005;&#21387;不能突然改&#21464;,因而降低了&#24320;&#20851;管&#20851;&#26029;&#30005;&#21387;上升的速率,并把&#24320;&#20851;管的&#20851;&#26029;功率&#25439;耗&#36716;移到了&#32531;&#20914;&#30005;路,如&#22270;十五:被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路&#30005;&#21387;/&#30005;流波形所示。</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image020_zh-cn.png"> <img id="圖片 66" alt="Technical Document Image Preview" height="330" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image020_zh-cn.png" width="508"></a></p> <p class="MsoNormal">&#22270;十四、附加被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路之反激式&#36716;&#25442;器</p> </div> <div class="WordSection18"> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image021_zh-cn.png"> <img id="圖片 68" alt="Technical Document Image Preview" height="236" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image021_zh-cn.png" width="680"></a></p> <p class="a6">&#22270;十五、被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路&#30005;&#21387;/&#30005;流波形 (DCM)</p> </div> <div class="WordSection19"> <p class="MsoNormal">&#24320;&#20851;管&#20851;&#26029;瞬&#38388;,&#32531;&#20914;&#30005;路的二极管&#23548;通,&#21464;&#21387;器的漏&#30005;感&#30005;流上升斜率(m<sub>i_Sn</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image022_zh-cn.png"> <img id="圖片 69" alt="Technical Document Image Preview" height="45" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image022_zh-cn.png" width="345"></a></p> <p class="MsoNormal">其中i<sub>Sn</sub>&#20026;&#32531;&#20914;&#30005;路流&#32463;二极管&#30005;流。</p> <p class="MsoNormal">&#32531;&#20914;&#30005;路的二极管&#23548;通&#26102;&#38388;(t<sub>Sn</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image023_zh-cn.png"> <img id="圖片 70" alt="Technical Document Image Preview" height="38" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image023_zh-cn.png" width="346"></a></p> <p class="MsoNormal">反激式&#36716;&#25442;器峰值&#30005;流(i<sub>DS_Peak</sub>)依工作模式不同分&#20026;:</p> <p class="MsoNormal">工作于不&#36830;&#32493;&#23548;通模式(DCM)的&#24320;&#20851;管峰值&#30005;流(i<sub>DS_Peak_DCM</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image024_zh-cn.png"> <img id="圖片 71" alt="Technical Document Image Preview" height="45" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image024_zh-cn.png" width="347"></a></p> <p class="MsoNormal">工作于&#36830;&#32493;&#23548;通模式(CCM)的&#24320;&#20851;管峰值&#30005;流(i<sub>DS_Peak_CCM</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image031_zh-cn.jpg"> <img id="圖片 72" alt="Technical Document Image Preview" height="52" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image031_zh-cn.jpg" width="500"></a></p> <p class="MsoNormal">其中P<sub>in</sub>&#20026;反激式&#36716;&#25442;器&#36755;入功率。</p> <p class="MsoNormal">&#32531;&#20914;&#30005;路之功率&#25439;耗(P<sub>Sn</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image026_zh-cn.png"> <img id="圖片 73" alt="Technical Document Image Preview" height="41" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image026_zh-cn.png" width="543"></a></p> <p class="MsoNormal">其中&#30005;容&#30005;&#21387;(V<sub>Sn</sub>)一般&#35774;&#35745;&#20026;n(V<sub>o</sub>+ V<sub>F</sub>) 的2~2.5倍。</p> <p class="MsoNormal">&#23558;公式(10)&#25442;算至&#30005;功率公式可知&#32531;&#20914;&#30005;路之&#30005;阻(R<sub>Sn</sub>):</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image027_zh-cn.png"> <img id="圖片 74" alt="Technical Document Image Preview" height="47" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image027_zh-cn.png" width="352"></a></p> <p class="MsoNormal">&#32531;&#20914;&#30005;路之&#30005;容(C<sub>Sn</sub>)的&#30005;&#21387;&#32441;波(<span lang="EN-US" style="font-family: Symbol">D</span>V<sub>Sn</sub>)一般&#35774;&#35745;&#20026;&#30005;容&#30005;&#21387;(V<sub>Sn</sub>) 的5~10%。依照伏秒平衡(Volt-Second Balance)之&#35266;念,可推&#23548;得出&#32531;&#20914;&#30005;路之&#30005;容(C<sub>Sn</sub>)&#35774;&#35745;值:</p> <p class="MsoNormal"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image028_zh-cn.png"> <img id="圖片 75" alt="Technical Document Image Preview" height="36" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image028_zh-cn.png" width="355"></a></p> <p class="MsoNormal">反激式&#36716;&#25442;器&#24320;&#20851;管之漏极与源极&#38388;的最高&#30005;&#21387;一般&#21457;生于系&#32479;工作于最高&#36755;入&#30005;&#21387;并且&#28385;&#36733;的情&#20917;,因此,反激式&#36716;&#25442;器之被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路&#24212;以此&#26465;件作&#20026;&#30005;容及&#30005;阻的&#35774;&#35745;依据,而二极管一般&#24212;&#36873;用快恢复二极管。一&#20010;&#23454;&#38469;的反激式&#36716;&#25442;器&#30005;源系&#32479;的&#24320;&#20851;管所受&#24212;力在加入被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路前后的&#23545;比&#35265;&#22270;十六,我&#20204;可&#20174;中看到明&#26174;的&#21306;&#21035;。通&#36807;上面的分析和&#23454;&#36341;,我&#20204;可以确信被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路&#35774;&#35745;可有效降低&#24320;&#20851;管所受&#24212;力以避免&#24320;&#20851;管之&#25439;坏,&#20174;而提高&#30005;路操作之可靠度,也可同&#26102;改善高&#39057;振&#33633;衍生之&#30005;磁干扰&#38382;&#39064;。</p> </div> <div class="WordSection20"> <p class="a6"> <a class="fancybox" href="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image029_zh-cn.png"> <img id="圖片 76" alt="Technical Document Image Preview" height="264" src="/content/dam/richtek-eds/resources/application-notes/an010/html-images-zh-cn/image029_zh-cn.png" width="680"></a></p> <p class="a6">&#22270;十六、被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路加入前后之&#24320;&#20851;管&#24212;力比&#36739;</p> </div> <div class="WordSection21"> <p class="MsoNormal"><br><br></p> <h2 id="__Bookmark__4">&#24635;&#32467;</h2> <p class="MsoNormal">&#24320;&#20851;&#32452;件Power MOSFET扮演&#30528;&#24320;&#20851;式&#30005;源&#36716;&#25442;器的重要角色。反激式&#36716;&#25442;器(Flyback Converter)&#25317;有初/次&#32423;隔离、&#30005;路架构&#31616;&#21333;、零件&#25968;少、成本低等特色,因而被&#24191;泛&#24212;用。反激式&#36716;&#25442;器&#24320;&#20851;管(MOSFET)之最大&#24212;力不一定&#21457;生于&#28385;&#36733;&#31283;&#24577;操作期&#38388;,更值得被探&#35752;的可能是“&#21551;&#21160;期&#38388;”。本&#24212;用文件&#20174;理&#35770;&#38416;述及&#23454;&#39564;佐&#35777;全方位、多角度探&#35752;“如何有效消除反激式&#36716;&#25442;器于&#21551;&#21160;期&#38388;MOSFET之&#36807;&#24212;力”,&#20174;反激式&#36716;&#25442;器系&#32479;的核心——反激式&#36716;&#25442;器控制器IC的&#36719;&#21551;&#21160;功能,到系&#32479;&#23618;面的回路&#31283;定度&#34917;&#20607;,最后提供&#24212;用&#30005;路——被&#21160;式&#30005;&#21387;箝位RCD&#32531;&#20914;&#30005;路的分析及&#35774;&#35745;方法。&#36825;些理&#35770;和方法可供研&#21457;工程&#24072;在&#36827;行反激式&#36716;&#25442;器&#30005;源系&#32479;的&#24320;&#21457;&#35774;&#35745;&#26102;&#21442;考,以便降低&#24320;&#20851;管所受之&#24212;力,避免&#24320;&#20851;管之&#25439;坏,提高&#30005;路操作之可靠度。</p> <p><br><br></p> <table border="1" cellspacing="0" cellpadding="0" style="width: 637.5pt; border-collapse: 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