The RT9611A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.
The RT9611A/B can be utilized under both VCC = 5V or VCC = 12V applications. The RT9611A/B also builds in an internal power switch to replace external boot strap diode. The RT9611A/B can support switching frequency efficiently up to 500kHz. The RT9611A/B has the UGATE driving circuit and the LGATE driving circuit for synchronous rectified DC/DC converter applications. The driving rise/fall time capability is designed within 30ns and the shoot through protection mechanism is designed to prevent shoot through of high side and low side power MOSFETs. The RT9611A/B has PWM tri-state shut down and OD input shut down functions which can force driver output into high impedance.
The difference of the RT9611A and the RT9611B is the propagation delay, tUGATEpdh. The RT9611B has comparatively large tUGATEpdh than RT9611B. Hence, the RT9611A is usually recommended to be utilized in performance oriented applications, such as high power density CPU VR or GPU VR.
The RT9611A/B comes in a small footprint with 8-pin packages. The choice of packages type includes SOP-8, SOP-8 (Exposed Pad) and WDFN-8EL 3x3.
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